1 p-channel 20 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 20 r ds(on) ( ? ) at v gs = - 4.5 v 0.120 r ds(on) ( ? ) at v gs = - 2.5 v 0.180 i d (a) - 3.9 configuration single s g d p-channel mosfet g to-236 (sot-23) s d top view 2 3 1 DTS2301S ordering information package sot-23 lead (pb)-free and ha logen-free DTS2301S absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current t c = 25 c i d - 3.9 a t c = 125 c - 2.2 continuous source curr ent (diode conduction) a i s - 3.7 pulsed drain current b i dm - 15 single pulse avalanche current l = 0.1 mh i as - 9 single pulse avalanche energy e as 4m j maximum power dissipation b t c = 25 c p d 3 w t c = 125 c 1 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 166 c/w junction-to-foot (drain) r thjf 50 dt s 2301s www. daysemi.jp s11-2111-rev. b, 07-nov-11 1 document number: 66718 p-channel 20 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width d 300 s, duty cycle d 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summar v ds (v) - 20 r ds(on) ( : ) at v gs = - 4.5 v 0.120 r ds(on) ( : ) at v gs = - 2.5 v 0.180 i d (a) - 3.9 configuration single s g d p-channel mosfet g to-236 (sot-23) s d top view 2 3 1 ' 7 6 6 package sot-23 lead (pb)-free and ha logen-free %544 absolute maimum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current t c = 25 c i d - 3.9 a t c = 125 c - 2.2 continuous source curr ent (diode conduction) a i s - 3.7 pulsed drain current b i dm - 15 single pulse avalanche current l = 0.1 mh i as - 9 single pulse avalanche energy e as 4m j maximum power dissipation b t c = 25 c p d 3 w t c = 125 c 1 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 166 c/w junction-to-foot (drain) r thjf 50
2 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 20 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - - 1.5 gate-source leakage i gss v ds = 0 v, v gs = 8 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 20 v - - - 1 a v gs = 0 v v ds = - 20 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 20 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 4.5 v v ds ??? 5 v - 8 - - a drain-source on-state resistance a r ds(on) v gs = - 4.5 v i d = - 2.8 a - 0.080 0.120 ? v gs = - 2.5 v i d = - 2 a - 0.110 0.180 forward transconductance a g fs v ds = - 1.6 v, i d = - 2.8 a - 7 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 10 v, f = 1 mhz - 340 425 pf output capacitance c oss - 80 100 reverse transfer capacitance c rss -5570 total gate charge c q g v gs = - 4.5 v v ds = - 10 v, i d = - 2.8 a -58 nc gate-source charge c q gs -0.7- gate-drain charge c q gd -1.3- gate resistance r g f = 1 mhz 5.5 10 14.5 ? turn-on delay time c t d(on) v dd = - 10 v, r l = 10 ? i d ? - 1 a, v gen = - 4.5 v, r g = 1 ? -1522 ns rise time c t r -1421 turn-off delay time c t d(off) -3045 fall time c t f -915 source-drain diode ratings and characteristics b pulsed current a i sm --- 15a forward voltage v sd i f = - 1.6 a, v gs = 0 - - 0.8 - 1.2 v dt s 2301s www. daysemi.jp s11-2111-rev. b, 07-nov-11 2 document number: 66718 notes a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 20 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - - 1.5 gate-source leakage i gss v ds = 0 v, v gs = 8 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 20 v - - - 1 a v gs = 0 v v ds = - 20 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 20 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 4.5 v v ds t 5 v - 8 - - a drain-source on-state resistance a r ds(on) v gs = - 4.5 v i d = - 2.8 a - 0.080 0.120 : v gs = - 2.5 v i d = - 2 a - 0.110 0.180 forward transconductance a g fs v ds = - 1.6 v, i d = - 2.8 a - 7 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 10 v, f = 1 mhz - 340 425 pf output capacitance c oss - 80 100 reverse transfer capacitance c rss -5570 total gate charge c q g v gs = - 4.5 v v ds = - 10 v, i d = - 2.8 a -58 nc gate-source charge c q gs -0.7- gate-drain charge c q gd -1.3- gate resistance r g f = 1 mhz 5.5 10 14.5 : turn-on delay time c t d(on) v dd = - 10 v, r l = 10 : i d - 1 a, v gen = - 4.5 v, r g = 1 : -1522 ns rise time c t r -1421 turn-off delay time c t d(off) -3045 fall time c t f -915 source-drain diode ratings and characteristics b pulsed current a i sm --- 15a forward voltage v sd i f = - 1.6 a, v gs = 0 - - 0.8 - 1.2 v
3 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 2 4 6 8 10 012345 v gs =10vthru2.5v v gs =1.5v v gs =2v v gs =1v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 2 4 6 8 10 012345 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c c r ss 0 100 200 300 400 500 600 0 5 10 15 20 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 2 4 6 8 10 012345 t c = 25 c t c = - 55 c t c = 125 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.1 0.2 0.3 0.4 0.5 0246810 v gs =2.5v v gs =4.5v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 012345 i d =2.8a v d s =10v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v) dt s 2301s www. daysemi.jp s11-2111-rev. b, 07-nov-11 3 document number: 66718 tpical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 2 4 6 8 10 012345 v gs =10vthru2.5v v gs =1.5v v gs =2v v gs =1v v ds - drain-to-source voltage (v) i d - drain current (a) 0 2 4 6 8 10 012345 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c c r ss 0 100 200 300 400 500 600 0 5 10 15 20 c i ss c o ss v ds - drain-to-source voltage (v) c - capacitance (pf) 0 2 4 6 8 10 012345 t c = 25 c t c = - 55 c t c = 125 c v gs - gate-to-source voltage (v) i d - drain current (a) 0 0.1 0.2 0.3 0.4 0.5 0246810 v gs =2.5v v gs =4.5v r ds(on) - on-resistance () i d - drain current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 012345 i d =2.8a v d s =10v q g - total gate charge (nc) v gs - gate-to-source voltage (v)
4 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source-drain diod e forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =2.8a v gs =2.5v v gs =4.5v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0.0 0.2 0.4 0.6 0.8 1.0 012345 t j = 25 c t j = 150 c r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource-to-drain voltage (v) i s - s ource current (a) - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 27 - 26 - 25 - 24 - 23 - 22 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j - junction temperature (c) v d s - drain-to- s ource voltage (v) dt s 2301s www. daysemi.jp s11-2111-rev. b, 07-nov-11 4 document number: 66718 tpical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source-drain diod e forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =2.8a v gs =2.5v v gs =4.5v t j - junction temperature (c) (normalized) r ds(on) - on-resistance 0.0 0.2 0.4 0.6 0.8 1.0 012345 t j = 25 c t j = 150 c r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs(th) variance (v) t j - temperature (c) - 27 - 26 - 25 - 24 - 23 - 22 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j - junction temperature (c) v ds - drain-to-source voltage (v)
5 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-foot 0.1 1 10 0.01 0.1 1 10 100 v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied i d - drain current (a) t c = 25 c single pulse bvdss limited 10 s, dc limited by r * ds(on) i dm limited 100 ms 10 ms 1 s 0.01 1 ms 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 single pulse 0.02 0.05 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thjf = 50 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted dt s 2301s www. daysemi.jp s11-2111-rev. b, 07-nov-11 5 document number: 66718 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-foot 0.1 1 10 0.01 0.1 1 10 100 v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied i d - drain current (a) t c = 25 c single pulse bvdss limited 10 s, dc limited by r * ds(on) i dm limited 100 ms 10 ms 1 s 0.01 1 ms 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 single pulse 0.02 0.05 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thjf = 50 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted
normalized e f fective t ransient thermal i mpedance th e rm a l ratings (t a = 25 c, un le ss ot he rwi se no ted) 1 duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 single pulse 10 -3 10 -2 10 -1 1 10 100 1000 square wave pulse duration (s) no t e n or mal iz ed therm al transie nt impeda nc e, juncti on -to-am bi ent ? the ch ar ac te ris ti cs sh o wn in the two gr aphs - nor malized tra ns i ent th ermal impedance junction- to -ambient ( 25 c) - normalized transi ent thermal impedance junction- to -foot ( 25 c ) are gi ve n for general gui de l in es on ly to e nab le the us er to ge t a ba ll park indication of part capabil it ie s. the data are ex tra ct ed from sin gle pu lse tr a ns i ent th ermal im pedan ce charac ter is ti cs wh ich are de ve loped fr om empirical m ea s ur em ent s. the la tt er is va lid for the part mounted on printed cir cuit board - fr 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part ca pa b ili t i es can widely vary depending on ac tu al a ppl ic at i on par am ete rs and operati ng co nditio ns. 6 dt s 2301s www. daysemi.jp
package information www. g d \ v h p l m s 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pl a ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pl a ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 3 5 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0 3 46 0.040 b 0. 3 5 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3 .04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 3 8 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information document number: 71196 09-jul-01 www. g d \ v h p l m s 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 35 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 374 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479
application note www. daysemi.jp 1 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index application note document number: 72609 www. daysemi.jp revision: 21-jan-08 1 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index
legal disclaimer notice www. daysemi.jp 1 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.daysemi.jp revision: 02-oct-12 1 document number: 72610 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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